Directional Solidification Grower
JZ-460 / 660 (G7 Hot-Zone) Directional Solidification Grower adopts the directional solidification technique and uses the vertical gradient directional crystallization process for accuracy control on temperature of the heater which could effectively controls the input and output of the heat and ensure the perfect quality. It can work at a very low temperature gradient and grow more than 1200kg of silicon ingot within about 85 hours. During the crystal growing process, the directional crystal growing can be realized by the movement of the heat insulation layer.During the material charging and silicon ingot taking outprocedures, only up-down movement of the lower chamber is applied. The unit energy consumption of this type of furnace is lower than 6.5kwh/kg. JZ 460/660 can be upgraded into G5 and G6 furnace by only changing the hot-zone system.
No. | Item | Specification |
1 | Crucible Size | 1200*1200*520(1200kg) |
2 | Ingot Size | 1156*1156*385(1200kg) |
3 | Graphite Heater Power | 200kw |
4 | Maximum Limited Temperature | 1575℃ |
5 | The whole process automatic control cycle time | 85 |
6 | Insulation Pack Travel | 280mm |
7 | Required Area for the Grower | 5160*4730*4960mm |