PROFESSIONAL
About Us
Share
Products
News


     Item

     Requirement

电学性能 electronic characters

导电类型(type

P (B dopant)

电阻率(resistivity)(Ω·cm

1.03.0

硅锭的少子寿命(minimum lifetime of bricks)μs

5average

氧含量(oxygen)ppma

10

碳含量(carbon)ppma

16

晶体结构 crystal structure

微晶(micro-grains)

无(no

表面质量 appearance

硅落、缺口、裂纹、沾污、针孔(chips,V-shape, crack, stain, pinhole)

无(Not allow

崩边(edge chips)mm

L≤ 0.5,W≤ 0.3,no more than 2/wafer

线痕(μm (saw marks)

≤15

弯曲度/翘曲度(bow/warp)μm

50

尺寸 dimension

边长(side length)(mm)

156.75±0.25

厚度(center thickness) μm

200

180

TVμm

200

±20

180

±15

TTVμm

200

30

180

25

垂直度(verticality

90 o±0.3o

包装与储运 package and carriage

包装(package)

1400片;11600片;148000片。

400pcs/box1600pcs/case48Kpcs/pallet

储存(Storage

温度(temperature.):10℃~40

湿度(humidity):≤70%

 

规格(mm)

尺寸Dimensionmm

ALength

BDiagonal length

CBevel edge width


Max.

Min.

Max.

Min.

Max.

Min.

156.75P

157

156.5

221.5

219.3

2

0.5

注:1.硅片的规格与电池片规格相对应;

2.ABC分别参见图1

Notice: 1.The dimension of wafer is related to the cell

2.ABC refer to Fig. 1


1 多晶硅片尺寸示意图

Fig1 Sketch map of multi-Si wafer

 

 

 图片1.jpg

 

 

 


上一个:

下一个: